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江紫红
发布日期:2024-03-22
  
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简介:博士,入选浙江省海外高层次青年人才、宁波市领军人才。2017年台湾科技大学电子工程专业获学士学位,2022年12月台湾阳明交通大学集成电路系统与设计专业获博士学位。IEEE Transactions on Electromagnetic Compatibility审稿人;2023年校级新教师教学竞赛三等奖。

科研成果:

主要参与人参与“高低工作电压混合集成电路(IC)产品之闩锁效应研究与防治”、“集成电路产品之可靠度提升”;

参与“新型置于耳蜗外人工电子耳系统”。

发表论文:

1.Zi-Hong Jiangand M. D. Ker, "The parasitic latch-up path from substrate p⁺guard ring to the NMOS in deep n-well operating with negative voltage sources,"IEEE Electron Device Letters, vol. 43, no. 4, pp. 604-606, 2022, doi: 10.1109/LED.2022.3155480.

2.Zi-Hong Jiangand M. D. Ker, "Schottky-embedded isolation ring to improve latch-up immunity between HV and LV circuits in a 0.18 μm BCD technology,"IEEE Journal of the Electron Devices Society, vol. 10, pp. 516-524, Jul. 2022, doi: 10.1109/JEDS.2022.3188938.

3.Zi-Hong Jiangand M. D. Ker, “Latch-up prevention with auto-detector circuit to stop latch-up occurrence in CMOS integrated circuits,”IEEE Transactions on Electromagnetic Compatibility, in press, Dec. 2022, doi: 10.1109/TEMC.2022.3202806.

4.M. D. Ker andZi-Hong Jiang, “Overview on latch-up prevention in CMOS integrated circuits by circuit solutions,”IEEE Journal of the Electron Devices Society, vol. 11, pp. 141-152, Feb. 2023, doi: 10.1109/JEDS.2022.3231822.

1.M. D. Ker andZi-Hong Jiang, “Latch-up issue between high-voltage circuit domain and low-voltage circuit domain in TFT LCD driver IC fabricated with BCD process,”Invited talk presented in the International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs TFT 8), Otaru (Sapporo), Japan, May 15-18, 2023.

社会兼职

IEEE Transactions on Electromagnetic Compatibility审稿人

荣誉获奖

2023年校级新教师教学竞赛三等奖

研究方向

主要研究ESD(静电放电)及Latch-up(闩锁) 防护、无线电源管理与数据传输、模拟集成电路设计等。